Rohm SemiconductorJapan
TRANS PREBIAS NPN 200MW UMT3
All alternatives
View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| Current - Collector (Ic) (Max) | 100 mA |
| Power - Max | 200 mW |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Frequency - Transition | 250 MHz |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | UMT3 |
| Other | |
| Base Product Number | DTC114 |
| Mfr | Rohm Semiconductor |
| Product Status | Not For New Designs |
| Resistor - Base (R1) | 10 kOhms |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |