Taiwan Semiconductor CorporationTaiwan, China
DIODE GEN PURP 100V 2A DO214AC
All alternatives
View full report7 alternatives on file, including 2 Chinese alternatives. Sign in to view them.
Technical parameters
Key specs
Reverse voltage100 V
Average rectified current2 A
Forward voltage950 mVMax · 2 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 2A |
| Current - Reverse Leakage @ Vr | 10 µA @ 100 V |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 2 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~150°C |
| Package | Tape & Reel (TR) |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | DO-214AC (SMA) |
| Other | |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | Taiwan Semiconductor Corporation |
| Product Status | Active |
| Reverse Recovery Time (trr) | 35 ns |
| Series | Automotive, AEC-Q101 |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Documents
No documents are linked to this part yet.