onsemiUnited States
MOSFET N-CH 60V 10.6A/22A 8MLP
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current10.6 ~ 22 A
On-resistance11.5 mΩMax · 10.6A
Gate threshold voltage4 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10.6A (Ta), 22A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 78W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-MLP (5x6), Power56 |
| Other | |
| Base Product Number | FDMS56 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 30 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10.6A, 10V |
| Series | UltraFET™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |