Fairchild SemiconductorUnited States
N-CHANNEL POWER MOSFET
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current67 A
On-resistance8.5 mΩMax · 16A
Gate threshold voltage3 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 67A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Package | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Supplier Device Package | TO-251 (IPAK) |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3087 pF @ 15 V |
| Mfr | Fairchild Semiconductor |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 16A, 10V |
| Series | PowerTrench® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±16V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |