onsemiUnited States
DIODE GEN PURP 200V 10A TO277-3
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View full reportTechnical parameters
Key specs
Reverse voltage200 V
Average rectified current10 A
Forward voltage950 mVMax · 10 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 5 µA @ 200 V |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 950 mV @ 10 A |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277-3 |
| Other | |
| Base Product Number | FES10 |
| Capacitance @ Vr, F | 140pF @ 4V, 1MHz |
| Diode Type | Standard |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 30 ns |
| Series | Automotive, AEC-Q101 |
| Speed | Standard Recovery >500ns, > 200mA (Io) |