onsemiUnited States
DIODE SIL CARB 650V 10.1A TO220
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Technical parameters
Key specs
Reverse voltage650 V
Average rectified current10.1 A
Forward voltage1.7 VMax · 8 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10.1A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tube |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Other | |
| Base Product Number | FFSP0865 |
| Capacitance @ Vr, F | 336pF @ 1V, 100kHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |