onsemiUnited States
DIODE SIC 650V 10A TO220F-2FS
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
Key specs
Reverse voltage650 V
Average rectified current10 A
TypeSchottky
| Power | |
|---|---|
| Current - Average Rectified (Io) | 10A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature - Junction | -55°C~175°C |
| Package | Tube |
| Package / Case | TO-220-2 Full Pack |
| Supplier Device Package | TO-220F-2FS |
| Other | |
| Base Product Number | FFSPF1065 |
| Capacitance @ Vr, F | 575pF @ 1V, 100kHz |
| Diode Type | Silicon Carbide Schottky |
| Mfr | onsemi |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| Series | - |
| Speed | No Recovery Time > 500mA (Io) |
Documents
No documents are linked to this part yet.