晶导微电子China
GD5NPD65ST — 山东晶导微 IGBT
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package Outline | TO-252W |
| Other | |
| Ic@TC=100℃(A) | 5 |
| VCE(sat)_TYP | 1.8 |
| VCES(V) | 650 |
| VGEth_MAX_(V) | 6.5 |
| VGEth_MIN_(V) | 4.5 |
GD5NPD65ST — 山东晶导微 IGBT
| Environment and package | |
|---|---|
| Package Outline | TO-252W |
| Other | |
| Ic@TC=100℃(A) | 5 |
| VCE(sat)_TYP | 1.8 |
| VCES(V) | 650 |
| VGEth_MAX_(V) | 6.5 |
| VGEth_MIN_(V) | 4.5 |