GeneSiC SemiconductorUnited States
DIODE GEN PURP 1.6KV 25A DO4
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View full reportTechnical parameters
Key specs
Reverse voltage1.6 kV
Average rectified current25 A
Forward voltage1.55 VMax · 60 A
TypeStandardStandard Recovery >500ns，> 200mA (Io)
| Power | |
|---|---|
| Current - Average Rectified (Io) | 25A |
| Current - Reverse Leakage @ Vr | 4 mA @ 1600 V |
| Voltage - DC Reverse (Vr) (Max) | 1600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.55 V @ 60 A |
| Environment and package | |
| Mounting Type | Chassis, Stud Mount |
| Operating Temperature - Junction | -40°C~180°C |
| Package | Bulk |
| Package / Case | DO-203AA, DO-4, Stud |
| Supplier Device Package | DO-4 |
| Other | |
| Capacitance @ Vr, F | - |
| Diode Type | Standard |
| Mfr | GeneSiC Semiconductor |
| Product Status | Obsolete |
| Series | - |
| Speed | Standard Recovery >500ns, > 200mA (Io) |