MACOM Technology SolutionsUnited States
High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
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View full reportTechnical parameters
| Gain(dB) | 17.0 |
| Max Frequency(MHz) | 2700 |
| Min Frequency(MHz) | 2300 |
High Power RF GaN-on-SiC HEMT 170 W, 50 V, 2.62 - 2.69 GHz
| Gain(dB) | 17.0 |
| Max Frequency(MHz) | 2700 |
| Min Frequency(MHz) | 2300 |