HUXN(慧芯)China
MOSFETs · 中低压MOSFETs
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| 封装 | TO-252 |
| Other | |
| Configuration | N |
| ID(A) | 18 |
| RDS(on) Max @VGS=10V (mΩ) | 180 |
| RDS(on) Typ @VGS=10V (mΩ) | 130 |
| VDS(V) | 200 |
| VGS(th) Typ(V) | 3 |
MOSFETs · 中低压MOSFETs
| Environment and package | |
|---|---|
| 封装 | TO-252 |
| Other | |
| Configuration | N |
| ID(A) | 18 |
| RDS(on) Max @VGS=10V (mΩ) | 180 |
| RDS(on) Typ @VGS=10V (mΩ) | 130 |
| VDS(V) | 200 |
| VGS(th) Typ(V) | 3 |