HTCSEMI(海天芯)China
HT2301ARTZ
Transistors - FETs, MOSFETs - SingleP通道增强模式功率MOSFET-VDS = -20V,ID = -3.5A
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage20 V
Continuous drain current3.5 A
On-resistance95 mΩMax · 2.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 3.5A |
| Other | |
| 导通电阻(RDS(on)) | 95mΩ@2.5V |
| 数量 | 1个P沟道 |