Rohm SemiconductorJapan
30V 12A, Dual Nch+Pch, HSMT8, Power MOSFET
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View full reportTechnical parameters
| Power | |
|---|---|
| Drain Current I D [A] | 12 |
| Drain-Source Voltage V DSS [V] | 30 |
| Drive Voltage[V] | 4.5 |
| Power Dissipation (PD)[W] | 14 |
| Environment and package | |
| Mounting Style | Surface mount |
| Package Code | HSMT8 |
| Package Size [mm] | 3.3x3.3 (t=0.9) |
| Storage Temperature (Max)[℃] | 150 |
| Storage Temperature (Min)[℃] | -55 |
| Other | |
| Number of terminal | 8 |
| Polarity | Nch+Pch |
| R DS(on) [Ω] V GS =10V(Typ) | 0.0132 |
| R DS(on) [Ω] V GS =4.5V(Typ) | 0.0189 |
| R DS(on) [Ω] V GS =Drive (Typ) | 0.0189 |
| Total gate charge Q g [nC] | 7.2 |
| trr (Typ.)[ns] | 15.9 |