Honeywell AerospaceUnited States
MOSFET N-CH 55V 4-PIN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage55 V
On-resistance400 mΩMax · 100mA
Gate threshold voltage2.4 VMax · 100μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | - |
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Power Dissipation (Max) | 50W (Tj) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | - |
| Supplier Device Package | - |
| Other | |
| Base Product Number | HTNFET |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 28 V |
| Mfr | Honeywell Aerospace |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 100mA, 5V |
| Series | HTMOS™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 100µA |