Infineon TechnologiesGermany
SIC DISCRETE
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage1.2 kV
Continuous drain current127 A
On-resistance18.4 mΩMax · 54.3A
Gate threshold voltage5.2 VMax · 23.4mA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 127A (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Power Dissipation (Max) | 455W (Tc) |
| Environment and package | |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tube |
| Package / Case | TO-247-4 |
| Supplier Device Package | PG-TO247-4-8 |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 18 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4580 nF @ 25 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 54.3A, 18V |
| Series | CoolSiC™ |
| Technology | SiCFET (Silicon Carbide) |
| Vgs (Max) | +20V, -5V |
| Vgs(th) (Max) @ Id | 5.2V @ 23.4mA |