Infineon TechnologiesGermany
IMZA65R072M1H
Single FETs, MOSFETsAll alternatives
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Technical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 28A |
| VDSS-最大漏源电压 | 650V |
| Vgs(th)-门槛电压 | 5.7V |
| 功耗系数 | N℃/W |
| 最大漏源电流Id | 28A |
| 漏源击穿电压Vdss | 650V |
| 门槛电压Vgs(th) | 5.7V |
| AC and DC characteristics | |
| RDS(on)-漏源导通阻抗 | 94mΩ |
| 最大漏源导通阻抗Ron | 94mΩ |
| Environment and package | |
| 封装类型1 | TO247 |
| 最大工作温度 | 150℃ |
| 最小工作温度 | -55℃ |
| Other | |
| Ciss-输入等效电容 | 744pF |
| Pd-功率耗散 | 96W |
| Qg-栅极电荷 | 22nC |
| 引脚数量1 | 3 |
| 最大耗散功率Pd | 96W |
| 栅极电荷Qg | 22nC |
| 栅源耐压Vgs+ | 23V |
| 栅源耐压Vgs- | 5V |
| 输入电容Ciss | 744pF |