Infineon TechnologiesGermany
IC GATE DRVR HIGH-SIDE 8SOIC
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Technical parameters
Key specs
Drivers1
Driven configurationHigh-side
Peak output current500 mAMax
Supply voltage10 ~ 20 V
| Power | |
|---|---|
| Channel Type | Single |
| Current - Peak Output (Source, Sink) | 250mA, 500mA |
| High Side Voltage - Max (Bootstrap) | 600 V |
| Logic Voltage - VIL, VIH | 6V, 9.5V |
| Voltage - Supply | 10V ~ 20V |
| AC and DC characteristics | |
| Rise / Fall Time (Typ) | 80ns, 40ns |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Other | |
| Base Product Number | IR2117S |
| Driven Configuration | High-Side |
| Gate Type | IGBT, N-Channel MOSFET |
| Input Type | Non-Inverting |
| Mfr | Infineon Technologies |
| Number of Drivers | 1 |
| Product Status | Obsolete |
| Series | - |