Infineon TechnologiesGermany
MOSFET N-CH 30V 30A DIRECTFET
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current30 ~ 150 A
On-resistance2.2 mΩMax · 30A
Gate threshold voltage2.25 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 150A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 2.8W (Ta), 89W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Package / Case | DirectFET™ Isometric MX |
| Supplier Device Package | DIRECTFET™ MX |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5640 pF @ 15 V |
| Mfr | Infineon Technologies |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 2.2mOhm @ 30A, 10V |
| Series | HEXFET® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.25V @ 250µA |
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