Infineon TechnologiesGermany
IRF7809AVPBF-1
Single FETs, MOSFETsAll alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
| Power | |
|---|---|
| ID-最大漏极电流 | 13.3A |
| Id-额定电流 | 13.3A |
| VDSS-最大漏源电压 | 30V |
| Environment and package | |
| 封装类型1 | TO263 |
| 最大工作温度 | 150℃ |
| Other | |
| Pd-功率耗散 | 2.5W |
| Pd-最大功率耗散 | 2.5W |
| Qg-栅极电荷 | 41nC |
| Vdss-漏源耐压 | 30V |
| Vgs-栅源耐压 | 12V |
| 内置ESD保护二极管 | 0 |
| 内置整流二极管 | 0 |
| 引脚数量1 | 3 |
| 集成ESD保护二极管 | 0 |
| 集成整流二极管 | 0 |