All alternatives

View full report

Technical parameters

Key specs

ChannelN-channel
Drain-source voltage200 V
Continuous drain current4.5 A
Power
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drain to Source Voltage (Vdss)200 V
Drive Voltage (Max Rds On, Min Rds On)-
Power Dissipation (Max)25W
Environment and package
Mounting TypeThrough Hole
Operating Temperature-
Package / CaseTO-205AF Metal Can
Supplier Device PackageTO-205AF (TO-39)
Other
FET Feature-
FET TypeN-Channel
MfrHarris Corporation
PackagingBulk
Part StatusActive
Rds On (Max) @ Id, Vgs-
Series-
TechnologyMOSFET (Metal Oxide)
Vgs (Max)-
Vgs(th) (Max) @ Id-

Documents

No documents are linked to this part yet.