Vishay SiliconixUnited States
MOSFET N-CH 60V 14A DPAK
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Technical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current14 A
On-resistance100 mΩMax · 8.4A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK |
| Other | |
| Base Product Number | IRLR024 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 25 V |
| Mfr | Vishay Siliconix |
| Packaging | Tape & Reel (TR) |
| Part Status | Last Time Buy |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 8.4A, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±10V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
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