Infineon TechnologiesGermany
MOSFET N-CH 60V 13A/57A TDSON-8
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage60 V
Continuous drain current13 ~ 57 A
On-resistance6.9 mΩMax · 32A
Gate threshold voltage2.3 VMax · 15μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13A (Ta), 57A (Tc) |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Power Dissipation (Max) | 3W (Ta), 44W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C~175°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | PG-TDSON-8 |
| Other | |
| Base Product Number | ISC0703N |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 30 V |
| Mfr | Infineon Technologies |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 6.9mOhm @ 32A, 10V |
| Series | OptiMOS™ 5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.3V @ 15µA |