VBsemi(微碧半导体)China
IXTH26P20P-VB
Transistors - FETs, MOSFETs - Single台积电流片,长电科技封装;TO247;P—Channel沟道;-100V;-21A;RDS(ON)=200(mΩ)@VGS=10V;VGS=±20V;Vth=-2V;采用Trench技术;
All alternatives
View full reportTechnical parameters
No technical parameters are available for this part.