VBsemi(微碧半导体)China
IXTP22N50PM-VB
Transistors - FETs, MOSFETs - SingleTO220F；N—Channel沟道,650V；20A；RDS(ON)=190mΩ@VGS=10V,VGS=30V；Vth=3.5V；
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Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current20 A
On-resistance190 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 20A |
| Other | |
| 导通电阻(RDS(on)) | 190mΩ@10V |
| 数量 | 1个N沟道 |