VBsemi(微碧半导体)China
IXTY2N60P-VB
Transistors - FETs, MOSFETs - Single台积电流片，长电科技封装；TO252；N—Channel沟道；650V；2A；RDS(ON)=4300(mΩ)@VGS=10V；VGS=±30V；Vth=3.5V；采用Planar技术；
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage650 V
Continuous drain current2 A
On-resistance3.8 ΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 650V |
| 连续漏极电流(Id) | 2A |
| Other | |
| 导通电阻(RDS(on)) | 3.8Ω@10V |
| 数量 | 1个N沟道 |
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