JSMSEMI(杰盛微)China
场效应MOS JSMS09
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-220F |
| Other | |
| BVDSS [V] | -60 |
| ID [A] | -2 |
| RDS(on) [Ω] | 0.16 |
| VGS(th) [V] | -2.5 |
| VGS [±V] | ±20 |
场效应MOS JSMS09
| Environment and package | |
|---|---|
| Package | TO-220F |
| Other | |
| BVDSS [V] | -60 |
| ID [A] | -2 |
| RDS(on) [Ω] | 0.16 |
| VGS(th) [V] | -2.5 |
| VGS [±V] | ±20 |