Lewa Micro(乐瓦微电子)China
LWD3003AS
Transistors - FETs, MOSFETs - SingleN+P沟道功率MOSFET，采用沟槽技术，具备低栅极电荷、低导通电阻和快速开关特性，适用于DC-DC转换器、便携式设备和电源管理等应用
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View full reportTechnical parameters
Key specs
ChannelN + P
Drain-source voltage30 V
Continuous drain current6.5 ~ 8.5 A
On-resistance10 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 30V |
| 连续漏极电流(Id) | 8.5A；6.5A |
| Other | |
| 导通电阻(RDS(on)) | 10mΩ@10V |
| 数量 | 1个N沟道+1个P沟道 |
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