Lewa Micro(乐瓦微电子)China
LWD6001AS
Transistors - FETs, MOSFETs - SingleN+P沟道功率MOSFET，采用沟槽技术，具有低栅极电荷和导通电阻，开关速度快
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View full reportTechnical parameters
Key specs
ChannelN + P
Drain-source voltage60 V
Continuous drain current5 ~ 6 A
On-resistance35 mΩMax · 10V
| Power | |
|---|---|
| 漏源电压(Vdss) | 60V |
| 连续漏极电流(Id) | 6A；5A |
| Other | |
| 导通电阻(RDS(on)) | 35mΩ@10V |
| 数量 | 1个N沟道+1个P沟道 |
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