Lewa Micro(乐瓦微电子)China
LWN2005AS
Transistors - FETs, MOSFETs - SingleN沟道功率MOSFET，采用沟槽技术，低栅极电荷和导通电阻，适用于多种应用
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage20 V
Continuous drain current20 A
On-resistance3.4 mΩMax · 4.5V
| Power | |
|---|---|
| 漏源电压(Vdss) | 20V |
| 连续漏极电流(Id) | 20A |
| Other | |
| 导通电阻(RDS(on)) | 3.4mΩ@4.5V |
| 数量 | 1个N沟道 |
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