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PJSEMI(平晶微)China

MMBTSC3875G

Bipolar Transistors - Unspecified Type
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Technical parameters

Key specs

TypeNPN
Collector-emitter voltage50 V
Collector current150 mAMax
Power150 mWMax
Power
集射极击穿电压(Vceo)50V
集电极电流(Ic)150mA
Other
晶体管类型NPN
耗散功率(Pd)150mW

Documents

DatasheetDatasheet · 776.1 KB · 2026-09-21DatasheetDatasheet · 508.8 KB · 2026-09-21DatasheetDatasheet · 432.1 KB · 2026-09-21DatasheetDatasheet · 432.0 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 421.5 KB · 2026-09-21DatasheetDatasheet · 417.8 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 240.7 KB · 2026-09-21
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