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Technical parameters

Power
IC-最大集电极电流0.3A
VCBO-集基级击穿电压800V
VCEO-集射级击穿电压400V
AC and DC characteristics
fT-变换频率50MHZ
hFE-最小直流增益40
Environment and package
封装类型1SOT89
最大工作温度85℃
Other
VCE(sat)-集射级饱和压降0.75V
引脚数量13

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