Microsemi CorporationUnited States
RF TRANS 65V M216
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View full reportTechnical parameters
| Power | |
|---|---|
| Current - Collector (Ic) (Max) | 28A |
| Power - Max | 910W |
| Voltage - Collector Emitter Breakdown (Max) | 65V |
| AC and DC characteristics | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 1A, 5V |
| Frequency - Transition | - |
| Gain | 7dB |
| Noise Figure (dB Typ @ f) | - |
| Environment and package | |
| Mounting Type | Chassis Mount |
| Operating Temperature | 250°C |
| Package | Bulk |
| Package / Case | M216 |
| Supplier Device Package | M216 |
| Other | |
| Mfr | Microsemi Corporation |
| Product Status | Obsolete |
| Series | - |
| Transistor Type | - |
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