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Technical parameters

Power
Current A (ampere)295
AC and DC characteristics
Fall Time tF ns (nanosecond)77
Rise Time tR ns (nanosecond)60
Environment and package
MaxOperatingJunctionTemp175
Other
ConfigurationPhase leg
Driver TypeSiC MOSFET
PKGHV-D3
RDSon (mΩ) typ6.8
Silicon TypeSiC MOSFET
Total Gate Charge (nC)1640
VDSS (V)3300

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