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Technical parameters

Power
Current A (ampere)151
AC and DC characteristics
Fall Time tF ns (nanosecond)65
Rise Time tR ns (nanosecond)40
Environment and package
MaxOperatingJunctionTemp175
Other
ConfigurationPhase leg
Driver TypeSiC MOSFET
PKGHV-D3
RDSon (mΩ) typ13.5
Silicon TypeSiC MOSFET
Total Gate Charge (nC)820
VDSS (V)3300

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