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Technical parameters

Power
Current A (ampere)538
AC and DC characteristics
Fall Time tF ns (nanosecond)92
Rise Time tR ns (nanosecond)125
Environment and package
MaxOperatingJunctionTemp175
Other
ConfigurationPhase Leg
PKGD3
RDSon (mΩ) typ2.5
Silicon TypeSiC MOSFET
Total Gate Charge (nC)1290
VDSS (V)700

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