NCE(无锡新洁能)China
12-200V P-Channel Trench MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | DFN 5*6 |
| Other | |
| BVDSS (V) | -40 |
| CISS (pF) | 7756 |
| ID (A) | -130 |
| PD (W) | 120 |
| Polarity | P |
| Product status | Production |
| QG (nC) | 158 |
| RDS(ON) @10VMax (mΩ) | 3.5 |
| RDS(ON) @10VTyp (mΩ) | 2.8 |
| RDS(ON) @4.5VMax (mΩ) | 6 |
| RDS(ON) @4.5VTyp (mΩ) | 4.6 |
| Technology | Trench |
| VGS(th) (V) | ±20 |
| VTH (V) | -1.8 |
| 车规级 工业级 | 工业级 |