NCE(无锡新洁能)China
500-900V N-Channel SJ-IV MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TO-263 |
| Other | |
| BVDSS (V) | 650 |
| CISS (pF) | 926 |
| ID (A) | 11 |
| PD (W) | 107 |
| Polarity | N |
| Product status | Production |
| QG (nC) | 26 |
| RDS(ON) @10VMax (mΩ) | 360 |
| RDS(ON) @10VTyp (mΩ) | 300 |
| Technology | SJ-IV |
| VGS(th) (V) | ±20 |
| VTH (V) | 3.5 |
| 车规级 工业级 | 工业级 |