NCE(无锡新洁能)China
30-250V N-Channel SGT-III MOSFET
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Package | TOLL |
| Other | |
| BVDSS (V) | 40 |
| CISS (pF) | 7900 |
| ID (A) | 372 |
| PD (W) | 300 |
| Polarity | N |
| Product status | Production |
| QG (nC) | 140 |
| RDS(ON) @10VMax (mΩ) | 1.2 |
| RDS(ON) @10VTyp (mΩ) | 0.8 |
| RDS(ON) @4.5VMax (mΩ) | 1.55 |
| RDS(ON) @4.5VTyp (mΩ) | 1.05 |
| Technology | SGT-III |
| VGS(th) (V) | ±20 |
| VTH (V) | 1.5 |
| 车规级 工业级 | 工业级 |