onsemiUnited States
MOSFET N-CH 30V 8.8A/58.5A 5DFN
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current8.8 ~ 58.5 A
On-resistance6.95 mΩMax · 30A
Gate threshold voltage2.5 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 58.5A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 11.5V |
| Power Dissipation (Max) | 870mW (Ta), 38.5W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Other | |
| Base Product Number | NTMFS4 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 12 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 6.95mOhm @ 30A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |