onsemiUnited States
MOSFET N-CH 80V 33A/287A 8DFNW
All alternatives
View full report1 alternatives on file. Sign in to view them.
Technical parameters
Key specs
ChannelN-channel
Drain-source voltage80 V
Continuous drain current33 ~ 287 A
On-resistance1.56 mΩMax · 80A
Gate threshold voltage4 VMax · 650μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 33A (Ta), 287A (Tc) |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Power Dissipation (Max) | 3.3W (Ta), 250W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C~150°C(TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT); Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Supplier Device Package | 8-TDFNW (8.3x8.4) |
| Other | |
| Base Product Number | NTMTSC1 |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 40 V |
| Mfr | onsemi |
| Product Status | Active |
| Rds On (Max) @ Id, Vgs | 1.56mOhm @ 80A, 10V |
| Series | Dual Cool™ |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 650µA |