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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage60 V
Continuous drain current28 ~ 150 A
On-resistance3 mΩMax · 27A
Gate threshold voltage4 VMax · 135μA
Power
Current - Continuous Drain (Id) @ 25°C28A (Ta), 150A (Tc)
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10V
Power Dissipation (Max)3.7W (Ta), 110W (Tc)
Environment and package
Mounting TypeSurface Mount
Operating Temperature-55°C~175°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT); Digi-Reel®
Package / Case8-PowerTDFN, 5 Leads
Supplier Device Package5-DFN (5x6) (8-SOFL)
Other
Base Product NumberNVMFS5
FET Feature-
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2630 pF @ 30 V
Mfronsemi
Product StatusActive
Rds On (Max) @ Id, Vgs3mOhm @ 27A, 10V
SeriesAutomotive, AEC-Q101
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id4V @ 135µA

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