Texas InstrumentsUnited States
1.8V micro-power zero-drift CMOS op-amp, offset 10μV max, quiescent current 17μA, rail-to-rail input and outputChecked against the datasheet
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View full reportTechnical parameters
Key specs
Supply voltage1.8 ~ 5.5 V
Input offset voltage10 µVMax
Quiescent current17 µATyp
Channels1
Datasheet-verified parameters
10 items| Parameter | Value and test conditions | Source |
|---|---|---|
| Supply voltage range | 1.8V~5.5V | |
| Quiescent current | 17μA | |
| Absolute maximum supply | 7V | |
| Input offset voltage | 10μV max | |
| Offset drift | 0.05μV/°C max | |
| Low-frequency noise | 1.1μV PP（0.01~10Hz） |
All parameters (40)
| Power | |
|---|---|
| 单通道静态电流 | 17uA |
| 最大供电电压 | 5.5V |
| 最大偏置电流 | 200pA |
| 最大工作电压 | 5.5V |
| 最大输出电流 | 5mA |
| 最小供电电压 | 1.8V |
| 最小工作电压 | 1.8V |
| 输出电流 | 5mA |
| 静态工作电流 | 17uA |
| AC and DC characteristics | |
| PSRR电源抑制比 | 120dB |
| 低频电压噪声 | 1.1uVPP |
| 共模抑制比 | 130dB |
| 增益带宽 | 0.35MHz |
| 失调电压温漂 | 0.02uV/℃ |
| 失调电压温漂系数 | 0.02uV/℃ |
| 工作带宽 | 0.35MHZ |
| 最大失调电压 | 10uV |
| 最大失调电流 | 400pA |
| 电压噪声密度 | 55nV/√Hz |
| 电源抑制比 | 120dB |
| 输出压摆率 | 0.16V/us |
| Environment and package | |
| 封装类型1 | SC70 |
| 封装类型2 | SOIC |
| 封装类型3 | SOT23 |
| 最大工作温度 | 125℃ |
| 最小工作温度 | -40℃ |
| Other | |
| EMI滤波 | 1 |
| 使能关断 | 0 |
| 共模输入(与VCC+差值) | 0.1V |
| 共模输入(与VCC-差值) | -0.1V |
| 应用场合1 | 充电器 |
| 应用案例1 | (苹果)96W USB PD快充 |
| 引脚数量1 | 5 |
| 引脚数量2 | 8 |
| 引脚数量3 | 5 |
| 轨到轨输入 | 1 |
| 轨到轨输出 | 1 |
| 输出摆幅(与VCC+差值) | -0.03V |
| 输出摆幅(与VCC-差值) | 0.03V |
| 零漂移特性 | 1 |
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