ORIENTAL SEMI(东微)China
SiC MOSFET · Industrial · V_DS 650V · I_D 53A
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View full reportTechnical parameters
| Environment and package | |
|---|---|
| Qualification | Industrial |
| Other | |
| C oss typ(pF) | 113 |
| E oss typ(pF) | 10.6 |
| I D max @25℃(A) | 53 |
| Nr of Transistors | 1 |
| Polarity | Single N |
| Q G typ(nC) | 46 |
| Q rr typ(nC) | 97 |
| R DS(on) typ @18V(mΩ) | 45 |
| V DS max(V) | 650 |
| V GS(th) max(V) | 3.6 |
| V GS(th) min(V) | 2.0 |