SHINDENGEN(新电元)Japan
This diode is also a P-N junction element with better reverse recovery characteristics. It is perfectly suited for SMPSes in fields including home electronics as well as those for office appliance apparatuses, and factory automation apparatuses. K series：Low V F ML series：Low V F , Low trr, Soft Recovery Type US series：Ultra Fast, Soft Recovery Type A series：Ultra Fast, Low V F Type
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View full reportTechnical parameters
Key specs
Reverse voltage600 V
Average rectified current150 A
| Power | |
|---|---|
| Average forward current | 235 |
| Current squared time | 45000 |
| Forward voltage | 1.25 |
| Repetitive peak reverse voltage | 600 |
| Reverse current | 1000 |
| Surge forward current | 3000 |
| Environment and package | |
| Junction temperature | -40 to 150 |
| Mounting torque | 2.4 to 2.8 |
| Package (House Name) | E-79 |
| Storage temperrature | -40 to 125 |
| Thermal resistance | 0.24 |
| Other | |
| As | Not identified |
| Br | Not identified |
| Conditions | Junction to case (Case to fin with grease_0.2℃/W) |
| Ctrl Number | PD151FYN6_Rev.01(2026.03) |
| Dielectric strength | 3 |
| I F (AV) | 150A |
| I FSM | 3000A |
| Ni | Not identified |
| Pb | Not identified |
| Reverse recovery time | 190 |
| Rp | Not identified |
| Sb | Not identified |
| Series | FRD Modules |
| V F (max.) | 1.25V |
| V RRM | 600V |