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HomeTransistors - FETs, MOSFETs - SinglePJSEMI(平晶微)PJM3400NSA
PJSEMI(平晶微)China

PJM3400NSA

Transistors - FETs, MOSFETs - Single
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Technical parameters

Key specs

ChannelN-channel
Drain-source voltage30 V
Continuous drain current5.8 A
On-resistance41 mΩMax · 10V
Power
漏源电压(Vdss)30V
连续漏极电流(Id)5.8A
Other
导通电阻(RDS(on))41mΩ@10V,5.8A
数量1个N沟道

Documents

DatasheetDatasheet · 2.2 MB · 2026-09-21DatasheetDatasheet · 776.1 KB · 2026-09-21DatasheetDatasheet · 432.1 KB · 2026-09-21DatasheetDatasheet · 432.0 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 421.5 KB · 2026-09-21DatasheetDatasheet · 417.8 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 240.7 KB · 2026-09-21
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