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HomeTransistors - FETs, MOSFETs - SinglePJSEMI(平晶微)PJM3407PSC
PJSEMI(平晶微)China

PJM3407PSC

Transistors - FETs, MOSFETs - Single

P沟道,VDS=-30V ID=-4.6A ,PD:1.25W RDS(ON)<55mΩ@Vgs=-10V

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Technical parameters

Key specs

Drain-source voltage30 V
Continuous drain current4.6 A
On-resistance80 mΩMax · 4.5V
Power
漏源电压(Vdss)30V
连续漏极电流(Id)4.6A
Other
导通电阻(RDS(on))80mΩ@4.5V
耗散功率(Pd)1.25W

Documents

DatasheetDatasheet · 1.1 MB · 2026-09-21DatasheetDatasheet · 776.1 KB · 2026-09-21DatasheetDatasheet · 432.1 KB · 2026-09-21DatasheetDatasheet · 432.0 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 430.9 KB · 2026-09-21DatasheetDatasheet · 421.5 KB · 2026-09-21DatasheetDatasheet · 417.8 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 241.2 KB · 2026-09-21DatasheetDatasheet · 240.7 KB · 2026-09-21
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