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View full reportTechnical parameters
| Power | |
|---|---|
| N管-ID最大漏极电流 | 4.4A |
| N管-Vdss漏源电压 | 30V |
| N管-Vgsth门槛电压 | 1.2V |
| P管-ID最大漏极电流 | 3.1A |
| P管-Vdss漏源电压 | 30V |
| P管-Vgsth门槛电压 | 1.3V |
| AC and DC characteristics | |
| N管-Rds最大导通阻抗 | 53mΩ |
| P管-Rds最大导通阻抗 | 114mΩ |
| Environment and package | |
| 封装类型1 | SOT23 |
| Other | |
| N管-Qg栅极电荷 | 5.3nC |
| N管-Vgs最大值 | 12V |
| P管-Qg栅极电荷 | 5.5nC |
| P管-Vgs最大值 | 12V |
| 引脚数量1 | 6 |
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