onsemiUnited States
MOSFET P-CH 30V 10A TO252-3
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View full reportTechnical parameters
Key specs
ChannelP-channel
Drain-source voltage30 V
Continuous drain current10 A
On-resistance200 mΩMax · 10A
Gate threshold voltage2 VMax · 250μA
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Drain to Source Voltage (Vdss) | 30 V |
| Environment and package | |
| Mounting Type | Surface Mount |
| Package | Tube |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252AA |
| Other | |
| Base Product Number | RFD10 |
| FET Feature | - |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 25 V |
| Mfr | onsemi |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 10A, 5V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |