Rohm SemiconductorJapan

RFNL10BM6SFHTL

ActiveSingle DiodesTO-252

DIODE GEN PURP 600V 10A TO252

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Technical parameters

Key specs

Reverse voltage600 V
Average rectified current10 A
Forward voltage1.3 VMax · 10 A
TypeStandardFast Recovery =< 500ns，> 200mA (Io)
Power
Current - Average Rectified (Io)10A
Current - Reverse Leakage @ Vr10 µA @ 600 V
Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 10 A
Environment and package
Mounting TypeSurface Mount
Operating Temperature - Junction150°C
PackageTape & Reel (TR) Cut Tape (CT) Digi-Reel®
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device PackageTO-252
Other
Base Product NumberRFNL10
Capacitance @ Vr, F-
MfrRohm Semiconductor
Product StatusActive
Reverse Recovery Time (trr)180 ns
Series-
SpeedFast Recovery =< 500ns, > 200mA (Io)
TechnologyStandard

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