MOSFET N-CH 30V 40A 8WPAK
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View full reportTechnical parameters
Key specs
ChannelN-channel
Drain-source voltage30 V
Continuous drain current40 A
On-resistance4.3 mΩMax · 20A
| Power | |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 40W (Tc) |
| Environment and package | |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Package | Bulk |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-WPAK |
| Other | |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3270 pF @ 10 V |
| Mfr | Renesas Electronics America Inc |
| Product Status | Obsolete |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 20A, 10V |
| Series | - |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | - |
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